1N5822 Schottky Barrier Diode

The IN5822 series employs the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features chrome barrier metal, epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low-voltage, high-frequency inverters, free wheeling diodes, and polarity protection diodes. Features:- • Extremely Low VF • Low Power Loss/High Efficiency • Low Stored Charge, Majority Carrier Conduction • Shipped in plastic bags, 500 per bag • Available in Tape and Reel, 1500 per reel, by adding a “RL'' suffix to the part number • Pb-Free Packages are Available Mechanical Characteristics:- • Case: Epoxy, Molded • Weight: 1.1 Gram (Approximately) • Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable • Lead Temperature for Soldering Purposes: 260°C Max. for 10 Seconds • Polarity: Cathode indicated by Polarity Band Specification:- Symbol Parameter Value Units VRRM Peak Repetitive Reverse Voltage 40 V VRWM Working Peak Reverse Voltage 40 V VR DC Blocking Voltage 40 V VR(RMS) RMS Reverse Voltage 28 V VRSM Non−Repetitive Peak Reverse Voltage 48 V IO Average Rectified Output Current 3 A IFSM Non-Repetitive Peak Forward Surge Current 80 A TJ Operating Junction Temperature Range − 65 to +125 °C Tstg Storage Temperature Range − 65 to +125 °C Related Document:- IN5822 Diode Data Sheet