1N60 Germanium Diode

The 1N60 Germanium Diode is a point contact diode employing N-from Germanium and gives an efficient and excellent linearity when used in TV image detection, FM detection, radio, AM detection, etc. Features:- • Metal silicon junction, majority carrier conduction • High current capability, Low forward voltage drop • Extremely low reverse current lR • Ultra speed switching characteristics • Small temperature coefficient of forward characteristics • Satisfactory Wave detection efficiency • For use in RECORDER, TV, RADIO, TELEPHONE as detectors, super high speed switching circuits, small current rectifier • Germanium Glass Diode • RoHS Compliance Mechanical Characteristics:- • Case: DO-7, molded glass • Weight:0.2 gram • Terminals: Plated axial lead, solderable per MIL-STD-202E, Method 208 • Polarity: Color band denotes cathode end Specification:- Symbol Parameter Value Units VRRM Peak Repetitive Reverse Voltage 40 V VRM Peak Reverse Voltage 45 V VR DC Blocking Voltage 20 V IO Average Rectified Output Current 50 A IFSM Non-Repetitive Peak Forward Surge Current 150 mA TJ Operating Junction Temperature Range − 65 to +125 °C Tstg Storage Temperature Range − 65 to +125 °C Related Document:- IN60 Diode Data Sheet