20N60 MOSFET - 650V 20.7A N-Channel Power MOSFET TO-247 Package

20N60 is new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. It is very suitable for various AC/DC power conversion in switching mode operation for system miniaturization and higher efficiency. Features:- New revolutionary high voltage technology Ultra low gate charge Periodic avalanche rated Extreme dv/dt rated High peak current capability Improved transconductance Detailed Specifications:- Number of Channels 1 Channel Transistor Polarity N-Channel Drain-Source Breakdown Voltage (Vds) 650V Continuous Drain Current (Id) 20.7A Drain-Source Resistance (Rds On) 190mOhms Gate-Source Voltage (Vgs) 20V Configuration Single Operating Temperature Range -55 - 150°C Power Dissipation (Pd) 208W Related Documents:- 20N60 MOSFET TO-247 Datasheet