2N3866 NPN RF Power Transistor 30V 0.4A TO-39 Metal Package

2N3866 is a semiconductor device used to amplify or switch electronic signals and electrical power. It is composed of semiconductor material usually with at least three terminals for connection to an external circuit. A voltage or current applied to one pair of the transistor's terminals controls the current through another pair of terminals. Because the controlled (output) power can be higher than the controlling (input) power, a transistor can amplify a signal. Today, some transistors are packaged individually, but many more are found embedded in integrated circuits. Features:- • Metal TO-39 can package • Advanced process technology • Low error voltage • Fast switching speed • Full-voltage operation • High power and current handling capability Detailed Specifications:- Transistor Polarity NPN Collector-Base Voltage (VCBO) 60VDC Collector-Emitter Voltage (VCEO) 30VDC Emitter-Base Voltage (VEBO) 305VDC Continuous Collector Current (IC) 400mA Output Capacitance (Cob) 3.5pF Collector-Emitter Saturation Voltage (VCE(sat)) 1VDC Power Output (Pout) 1-2W Operating Temperature Range -65 - 200°C Power Dissipation (PD) 1W Related Documents 2N3866 Transistor Metal Datasheet