2SK1120 MOSFET - 1000V 8A N-Channel Power MOSFET TO-3PN Package

2SK1120 utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications Features:- • Low drain−source ON resistance • High forward transfer admittance • Low leakage current • Enhancement mode • RDS (ON) = 1.5 Ω (typ.) • |Yfs| = 4.0 S (typ.) • IDSS = 300 μA (max) (VDS = 800 V) • 1.5 to 3.5 V (VDS = 10 V, ID = 1 mA) Detailed Specifications:- Number of Channels 1 Channel Transistor Polarity N-Channel Drain-Source Breakdown Voltage (Vds) 1000V Continuous Drain Current (Id) 8A Drain-Source Resistance (Rds On) 1.8Ohms Gate-Source Voltage (Vgs) 20V Gate Charge (Qg) 120 nC Operating Temperature Range -55 - 150°C Power Dissipation (Pd) 150W Related Documents:- 2SK1120 MOSFET Datasheet