2SK2611 MOSFET - 900V 9A N-Channel Power MOSFET TO-3PN Package
2SK2611 MOSFET - 900V 9A N-Channel Power MOSFET TO-3PN Package
K2611S N-Channel enhancement mode power field effect transistors are produced using Winsemi's proprietary, planar stripe ,DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance , provide superior switching performance, and withstand high energy pulse i
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K2611S N-Channel enhancement mode power field effect transistors are produced using Winsemi's proprietary, planar stripe ,DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance , provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies. Features:- • 9A,900V, RDS(on)(Max1.1Ω)@VGS=10V • Ultra-low Gate charge(Typical 58nC) • Fast Switching Capability • 100%Avalanche Tested • Maximum Junction Temperature Range(150℃) Detailed Specifications:- Number of Channels 1 Channel Transistor Polarity N-Channel Drain-Source Breakdown Voltage (Vds) 900V Continuous Drain Current (Id) 9A Drain-Source Resistance (Rds On) 1.1Ohms Gate-Source Voltage (Vgs) 30V Gate Charge (Qg) 58 nC Operating Temperature Range -55 - 150°C Power Dissipation (Pd) 150W Related Documents:- 2SK2611 MOSFET Datasheet
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2SK2611 MOSFET - 900V 9A N-Channel Power MOSFET TO-3PN Package