2SK3878 MOSFET - 900V 9A N-Channel Power MOSFET TO-3P Package

2SK3878 is new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. It is very suitable for various AC/DC power conversion in switching mode operation for system miniaturization and higher efficiency. Features:- • Low drain−source ON resistance • High forward transfer admittance • Low leakage current • Enhancement mode Detailed Specifications:- Number of Channels 1 Channel Transistor Polarity N-Channel Drain-Source Breakdown Voltage (Vds) 900V Continuous Drain Current (Id) 9A Drain-Source Resistance (Rds On) 1Ohms Gate-Source Voltage (Vgs) 30V Gate Charge (Qg) 60 nC Operating Temperature Range -55 - 150°C Power Dissipation (Pd) 150W Related Documents:- 2SK3878 MOSFET Datasheet