38N30 MOSFET - FQA38N30 300V 38.4A N-Channel Power MOSFET TO-3 Package
38N30 MOSFET - FQA38N30 300V 38.4A N-Channel Power MOSFET TO-3 Package
38N30 N-Channel enhancement mode power field effect transistors. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for hig
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38N30 N-Channel enhancement mode power field effect transistors. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supply, power factor correction, electronic lamp ballast based on half bridge. Features • Low gate charge (Typ. 90 nC) • Low crss (Typ. 70 pF) • 100% avalanche tested • RoHS compliant Detailed Specifications:- Number of Channels 1 Channel Transistor Polarity N-Channel Drain-Source Breakdown Voltage (Vds) 300V Continuous Drain Current (Id) 38.4A Drain-Source Resistance (Rds On) 85mOhms Gate-Source Voltage (Vgs) 30V Gate Charge (Qg) 120 nC Operating Temperature Range -55 - 150°C Power Dissipation (Pd) 290W Related Documents 38N30 Mosfet Datasheet
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38N30 MOSFET - FQA38N30 300V 38.4A N-Channel Power MOSFET TO-3 Package