BD139 NPN Bipolar Medium Power Transistor 80V 1.5A TO-126 Package
BD139 NPN Bipolar Medium Power Transistor 80V 1.5A TO-126 Package
BD139 is a three layer NPN or PNP device within the working range, the collector current IC is a function of the base current IB, a change in the base current giving a corresponding amplified change in the collector current for a given collector emitter voltage VCE. Features:- • Low saturation volta
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BD139 is a three layer NPN or PNP device within the working range, the collector current IC is a function of the base current IB, a change in the base current giving a corresponding amplified change in the collector current for a given collector emitter voltage VCE. Features:- • Low saturation voltage • Simple drive requirements • High safe operating area • For low distortion complementary designs • Easy to carry and handle Detailed Specifications:- Transistor Polarity NPN Collector−Emitter Voltage (VCEO) 80V Collector−Base Voltage (VCBO) 80V Continuous Collector Current (Ic) 1.5A Continuous Base Current (Ib) 0.5A DC Current Gain (hFE) 40-250 Operating Temperature Range -65 - 150°C Power Dissipation (Pd) 12.5W Thermal Resistance (ΘJA) 100°C/W Thermal Resistance (ΘJC) 10°C/W Related Documents:- BD139 Transistor Datasheet
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BD139 NPN Bipolar Medium Power Transistor 80V 1.5A TO-126 Package