BD237 NPN Bipolar Medium Power Transistor 80V 2A TO-126 Package
BD237 NPN Bipolar Medium Power Transistor 80V 2A TO-126 Package
BD237 is a three layer NPN or PNP device within the working range, the collector current IC is a function of the base current IB, a change in the base current giving a corresponding amplified change in the collector current for a given collector emitter voltage VCE. Features:- • Low saturation volta
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BD237 is a three layer NPN or PNP device within the working range, the collector current IC is a function of the base current IB, a change in the base current giving a corresponding amplified change in the collector current for a given collector emitter voltage VCE. Features:- • Low saturation voltage • Simple drive requirements • High safe operating area • For low distortion complementary designs • Easy to carry and handle Detailed Specifications:- Transistor Polarity NPN Collector−Emitter Voltage (VCEO) 100V Collector−Base Voltage (VCBO) 100V Continuous Collector Current (Ic) 2A DC Current Gain (hFE) 40 Operating Temperature Range -65 - 150°C Power Dissipation (Pd) 25W Collector Peak Current (ICM) 6A Junction Temperature (TJ) 150°C Related Documents:- BD237 Transistor Datasheet
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BD237 NPN Bipolar Medium Power Transistor 80V 2A TO-126 Package