BD681 NPN Power Darlington Transistor 100V 4A TO-126 Package
BD681 NPN Power Darlington Transistor 100V 4A TO-126 Package
BD681 is a three layer NPN device within the working range, the collector current IC is a function of the base current IB, a change in the base current giving a corresponding amplified change in the collector current for a given collector emitter voltage VCE. Features:- • Low saturation voltage • Si
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BD681 is a three layer NPN device within the working range, the collector current IC is a function of the base current IB, a change in the base current giving a corresponding amplified change in the collector current for a given collector emitter voltage VCE. Features:- • Low saturation voltage • Simple drive requirements • High safe operating area • For low distortion complementary designs • Easy to carry and handle Detailed Specifications:- Transistor Polarity NPN Collector−Emitter Voltage (VCEO) 100V Collector−Base Voltage (VCBO) 100V Emitter Base Voltage (VEBO) 5V Continuous Collector Current (Ic) 4A Continuous Base Current (Ib) 0.1A Operating Temperature Range -65 - 150°C Power Dissipation (Pd) 40W DC Current Gain (hFE) 750 Related Documents:- BD681 Transistor Datasheet
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BD681 NPN Power Darlington Transistor 100V 4A TO-126 Package