BU407 NPN Bipolar Power Transistor 150V 7A TO-220 Package
BU407 NPN Bipolar Power Transistor 150V 7A TO-220 Package
BU407 is a three layer NPN device within the working range, the collector current IC is a function of the base current IB, a change in the base current giving a corresponding amplified change in the collector current for a given collector emitter voltage VCE. Features:- • Low saturation voltage • Si
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BU407 is a three layer NPN device within the working range, the collector current IC is a function of the base current IB, a change in the base current giving a corresponding amplified change in the collector current for a given collector emitter voltage VCE. Features:- • Low saturation voltage • Simple drive requirements • High safe operating area • For low distortion complementary designs • Easy to carry and handle Detailed Specifications:- Transistor Polarity NPN Collector−Emitter Voltage (VCEO) 150VDC Collector−Base Voltage (VCBO) 330VDC Emitter-Base Voltage (VEBO) 6VDC Continuous Collector Current (Ic) 10ADC Continuous Base Current (Ib) 4ADC Operating Temperature Range -65 - 150°C Power Dissipation (Pd) 60W Current Gain Bandwidth (fT) 10MHz Related Documents:- BU407 Transistor Datasheet
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BU407 NPN Bipolar Power Transistor 150V 7A TO-220 Package