BU505 - NPN High Voltage Multiepitaxial Fast Switching Transistor
BU505 - NPN High Voltage Multiepitaxial Fast Switching Transistor
BU505 is a three layer NPN or PNP device within the working range, the collector current IC is a function of the base current IB, a change in the base current giving a corresponding amplified change in the collector current for a given collector emitter voltage VCE. Features • High Ruggedness • Simp
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BU505 is a three layer NPN or PNP device within the working range, the collector current IC is a function of the base current IB, a change in the base current giving a corresponding amplified change in the collector current for a given collector emitter voltage VCE. Features • High Ruggedness • Simple drive requirements • High safe operating area • For low distortion complementary designs • Easy to carry and handle Detailed Specifications Transistor Polarity NPN Collector−Emitter Voltage (VCEO) 1500V Continuous Collector Current (Ic) 2.5A Continuous Base Current (Ib) 1A Operating Temperature Range -65 - 150°C Power Dissipation (Pd) 75W Collector Peak Current (ICM) 4A Thermal Resistance Junction-Case 1.67°C/W Fall Time (tF) 350 ns Related Documents BU505 Datasheet
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BU505 - NPN High Voltage Multiepitaxial Fast Switching Transistor