BUZ90 N-Channel Mosfet Power Transistor 600V 4.5A TO-220 Package
BUZ90 N-Channel Mosfet Power Transistor 600V 4.5A TO-220 Package
BUZ90 is a three layer NPN or PNP device within the working range, the collector current IC is a function of the base current IB, a change in the base current giving a corresponding amplified change in the collector current for a given collector emitter voltage VCE. Features:- • High Ruggedness • Si
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BUZ90 is a three layer NPN or PNP device within the working range, the collector current IC is a function of the base current IB, a change in the base current giving a corresponding amplified change in the collector current for a given collector emitter voltage VCE. Features:- • High Ruggedness • Simple drive requirements • High safe operating area • For low distortion complementary designs • Easy to carry and handle Detailed Specifications:- Transistor Polarity N-Channel Drain−Source Voltage (VDS) 600V Drain Current (Id) 4.5A Drain−Source Resistance (RDS) 1.6 ohm Power Dissipation (Pd) 500mW Operating Temperature Range -65 - 200°C Output Capacitance (Cobo) 4pF Input Capacitance (Cibo) 5pF Storage Time (ts) 13 ns Related Documents:- BUZ90 Transistor Datasheet
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BUZ90 N-Channel Mosfet Power Transistor 600V 4.5A TO-220 Package