CL100 NPN Medium Power Transistor 50V 1A TO-39 Metal Package
CL100 NPN Medium Power Transistor 50V 1A TO-39 Metal Package
CL100 is a three layer NPN device within the working range, the collector current IC is a function of the base current IB, a change in the base current giving a corresponding amplified change in the collector current for a given collector emitter voltage VCE. Features:- • High Ruggedness • Simple dr
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CL100 is a three layer NPN device within the working range, the collector current IC is a function of the base current IB, a change in the base current giving a corresponding amplified change in the collector current for a given collector emitter voltage VCE. Features:- • High Ruggedness • Simple drive requirements • High safe operating area • For low distortion complementary designs • Easy to carry and handle Detailed Specifications:- Transistor Polarity NPN Collector−Emitter Voltage (VCEO) 50V Continuous Collector Current (Ic) 1A Emitter Base Voltage (VEBO) 5V Power Dissipation (Pd) 3W Operating Temperature Range -55 - 175°C DC Current Gain (hFE) 20 Related Documents:- CL100 Transistor Datasheet
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CL100 NPN Medium Power Transistor 50V 1A TO-39 Metal Package