CNY65B Photo-transistor Output Optocoupler IC DIP-4 Package

The CNY65 consist of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in a 4 pin plastic package. The single components are mounted opposite one another, providing a distance between input and output for the highest safety requirements of > 3 mm. Features:- • Rated recurring peak voltage (repetitive) VIORM = 1450 Vpeak • Thickness through insulation 3 mm • Creepage current resistance according to VDE 0303/IEC 60112 comparative tracking index: CTI 200 • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC Specification:- Parameter Value Package / Case DIP-4 Length 17.8 mm Width 9.6 mm Height 6.1 mm Collector-Emitter Breakdown Voltage 32 V Configuration 1 Channel Current Transfer Ratio 100 % to 200 % Description/Function Optocoupler, Phototransistor Output, Very High Isolation Voltage Fall Time 2.7 us Isolation Voltage 8200 Vrms Maximum Collector Current 50 mA Maximum Collector Emitter Saturation Voltage 0.3 V Maximum Collector Emitter Voltage 32 V Maximum Operating Temperature + 85 C Minimum Operating Temperature - 55 C Mounting Style Through Hole Number of Channels 1 Channel Output Type NPN Phototransistor Packaging Tube Pd - Power Dissipation 250 mW Product Type Transistor Output Optocouplers Rise Time 2.4 us Series CNY Related Document:- CNY65B IC Data Sheet