FDN306P MOSFET - (SMD SOT-23 Package) - 12V 2.6A P-Channel MOSFET
FDN306P MOSFET - (SMD SOT-23 Package) - 12V 2.6A P-Channel MOSFET
This P-Channel 2.6V specified MOSFET uses advanced low voltage Power Trench process. It has been optimised for battery power management applications. Features:- -2.4 A, -20 V. RDS(ON) = 40 mΩ @ VGS = -4.5V RDS(ON) = 50 mΩ @ VGS = -2.5V RDS(ON) = 80 mΩ @ VGS = -1.8V Fast Switching Speed High Performa
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In stock — 2700 units ready
- -2.4 A, -20 V.
- Fast Switching Speed
- High Performance Trench Technology for Extremely Low RDS(ON)
- Super SOT-23 provides Low RDS(ON) and 30% Higher Power
- Handling Capability than SOT23 in the same Footprint
- These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant
- Battery management
- Load switch
- Battery protection
- Drain-Source Voltage: -12V
- Gate-Source Voltage: ±8V
- Drain Current – Continuous: -2.6A
- Drain Current – Pulsed: -10A
- Maximum Power Dissipation: 0.5-0.46W
- Operating and Storage Junction Temperature Range: -55 to +150°C
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This P-Channel 2.6V specified MOSFET uses advanced low voltage Power Trench process. It has been optimised for battery power management applications. Features:- -2.4 A, -20 V. RDS(ON) = 40 mΩ @ VGS = -4.5V RDS(ON) = 50 mΩ @ VGS = -2.5V RDS(ON) = 80 mΩ @ VGS = -1.8V Fast Switching Speed High Performance Trench Technology for Extremely Low RDS(ON) Super SOT-23 provides Low RDS(ON) and 30% Higher Power Handling Capability than SOT23 in the same Footprint These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Applications:- Battery management Load switch Battery protection Specifications:- Drain-Source Voltage: -12V Gate-Source Voltage: ±8V Drain Current – Continuous: -2.6A Drain Current – Pulsed: -10A Maximum Power Dissipation: 0.5-0.46W Operating and Storage Junction Temperature Range: -55 to +150°C Package Includes:- 1 x FDN306P MOSFET - (SMD SOT-23 Package) - 12V 2.6A P-Channel MOSFET
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FDN306P MOSFET - (SMD SOT-23 Package) - 12V 2.6A P-Channel MOSFET