FDN337N MOSFET - (SMD SOT-23 Package) - 30V 2.2A N-Channel Logic Level Enhancement Mode MOSFET

Super SOT-23 N-Channel logic level enhancement mode power field effect transistors are produced using high cell density. This very high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage applications in notebook computers, portable phones, PCMCIA cards, and other battery powered circuits where fast switching, and low in-line power loss are needed in a very small outline surface mount package. Features:- 2.2 A, 30 V RDS(ON) = 0.065Ω @ VGS = 4.5V RDS(ON) = 0.082Ω @ VGS = 2.5V Industry standard outline SOT-23 surface mount package using proprietary Super SOT-23 design for superior thermal and electrical capabilities. High density cell design for extremely low RDS(ON). Exceptional on-resistance and maximum DC current capability. Specifications:- Drain-Source Voltage: 30V Gate-Source Voltage: ±20V Drain Current – Continuous: 2.2A Drain Current – Pulsed: 10A Maximum Power Dissipation: 0.5-0.46W Operating and Storage Junction Temperature Range: -55 to +150°C Package Includes:- 1 x FDN337N MOSFET - (SMD SOT-23 Package) - 30V 2.2A N-Channel Logic Level Enhancement Mode MOSFET