FDN339N MOSFET - (SMD SOT-23 Package) - 20V 3A N-Channel MOSFET
FDN339N MOSFET - (SMD SOT-23 Package) - 20V 3A N-Channel MOSFET
This N-Channel 2.5V specified MOSFET is produced advanced Power Trench process that has been especially tailored to minimize theon-state resistance and yet maintain low gate charge for superior switching performance. Features:- 3 A, 20 V. RDS(ON) = 0.035 Ω @ VGS = 4.5V RDS(ON) = 0.050 Ω @ VGS = 2.5V
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In stock — 2309 units ready
- 3 A, 20 V.
- Low gate charge (7nC typical)
- High Performance Trench Technology for Extremely Low RDS(ON)
- High power and current handling capability
- DC/DC converter
- Load switch
- Drain-Source Voltage: 20V
- Gate-Source Voltage: ±8V
- Drain Current – Continuous: 3A
- Drain Current – Pulsed: 20A
- Maximum Power Dissipation: 0.5-0.46W
- Operating and Storage Junction Temperature Range: -55 to +150°C
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This N-Channel 2.5V specified MOSFET is produced advanced Power Trench process that has been especially tailored to minimize theon-state resistance and yet maintain low gate charge for superior switching performance. Features:- 3 A, 20 V. RDS(ON) = 0.035 Ω @ VGS = 4.5V RDS(ON) = 0.050 Ω @ VGS = 2.5V Low gate charge (7nC typical) High Performance Trench Technology for Extremely Low RDS(ON) High power and current handling capability Applications:- DC/DC converter Load switch Specifications:- Drain-Source Voltage: 20V Gate-Source Voltage: ±8V Drain Current – Continuous: 3A Drain Current – Pulsed: 20A Maximum Power Dissipation: 0.5-0.46W Operating and Storage Junction Temperature Range: -55 to +150°C Package Includes:- 1 x FDN339N MOSFET - (SMD SOT-23 Package) - 20V 3A N-Channel MOSFET
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FDN339N MOSFET - (SMD SOT-23 Package) - 20V 3A N-Channel MOSFET