FDN357P MOSFET - (SMD SOT-23 Package) - 30V 1.9A P-Channel Logic Level Enhancement Mode MOSFET

Super SOT-23 P-Channel logic level enhancement mode power field effect transistors are produced using high cell density. This very high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage applications in notebook computers, portable phones, PCMCIA cards, and other battery powered circuits where fast switching, and low in-line power loss are needed in a very small outline surface mount package. Features:- -1.9 A, -30 V RDS(ON) = 0.090 Ω @ VGS = -4.5V RDS(ON) = 0.060 Ω @ VGS = -10V Industry standard outline SOT-23 surface mount package using proprietary Super SOT-23 design for superior thermal and electrical capabilities. High density cell design for extremely low RDS(ON). Exceptional on-resistance and maximum DC current capability. Specifications:- Drain-Source Voltage: -30V Gate-Source Voltage: ±20V Drain Current – Continuous: -1.9A Drain Current – Pulsed: -10A Maximum Power Dissipation: 0.5-0.46W Operating and Storage Junction Temperature Range: -55 to +150°C Package Includes:- 1 x FDN357P MOSFET - (SMD SOT-23 Package) - 30V 1.9A P-Channel Logic Level Enhancement Mode MOSFET