FDN358P MOSFET - (SMD SOT-23 Package) - 30V 1.5A P-Channel Logic Level Enhancement Mode MOSFET

Super SOT-23 P-Channel logic level enhancement mode power field effect transistors are produced using high cell density. This very high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage applications in notebook computers, portable phones, PCMCIA cards, and other battery powered circuits where fast switching, and low in-line power loss are needed in a very small outline surface mount package. Features:- -1.5 A, -30 V RDS(ON) = 0.125Ω @ VGS = -10V RDS(ON) = 0.20Ω @ VGS = -4.5V Low Gate Charge (7.2nC Typical) High Performance Trench Technology for Extremely Low RDS(ON) High Power Version of Industry Standard SOT−23 Package. Identical Pin−Out to SOT−23 with 30% Higher Power Handling Capability These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Specifications:- Drain-Source Voltage: -30V Gate-Source Voltage: ±20V Drain Current – Continuous: -1.5A Drain Current – Pulsed: -5A Maximum Power Dissipation: 0.5-0.46W Operating and Storage Junction Temperature Range: -55 to +150°C Package Includes:- 1 x FDN358P MOSFET - (SMD SOT-23 Package) - 30V 1.5A P-Channel Logic Level Enhancement Mode MOSFET