FDN360P MOSFET - (SMD SOT-23 Package) - 30V 2A P-Channel Logic Level MOSFET
FDN360P MOSFET - (SMD SOT-23 Package) - 30V 2A P-Channel Logic Level MOSFET
This P-Channel Logic Level MOSFET is produced using advanced Power Trench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power
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In stock — 1988 units ready
- -2 A, -30 V
- Low gate charge (5nC typical).
- Fast switching speed.
- High performance trench technology for extremely low RDS(ON).
- High power and current handling capability
- Drain-Source Voltage: -30V
- Gate-Source Voltage: ±20V
- Drain Current – Continuous: -2A
- Drain Current – Pulsed: -20A
- Maximum Power Dissipation: 0.5-0.46W
- Operating and Storage Junction Temperature Range: -55 to +150°C
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This P-Channel Logic Level MOSFET is produced using advanced Power Trench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required. Features:- -2 A, -30 V RDS(ON) = 0.080Ω @ VGS = -10V RDS(ON) = 0.125Ω @ VGS = -4.5V Low gate charge (5nC typical). Fast switching speed. High performance trench technology for extremely low RDS(ON). High power and current handling capability Specifications:- Drain-Source Voltage: -30V Gate-Source Voltage: ±20V Drain Current – Continuous: -2A Drain Current – Pulsed: -20A Maximum Power Dissipation: 0.5-0.46W Operating and Storage Junction Temperature Range: -55 to +150°C Package Includes:- 1 x FDN360P MOSFET - (SMD SOT-23 Package) - 30V 2A P-Channel Logic Level MOSFET
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FDN360P MOSFET - (SMD SOT-23 Package) - 30V 2A P-Channel Logic Level MOSFET