H11F1 Photo FET Optocoupler IC DIP-6 Package

The H11F consists of a Gallium-Aluminum-Arsenide IRED emitting diode coupled to a symmetrical bilateral silicon photo detector. The detector is electrically isolated from the input and performs like an ideal isolated FET designed for distortion-free control of low level AC and DC analog signals. The H11F series devices are mounted in dual in-line packages. Features:- • As a remote variable resistor • ≤ 100Ω to ≥ 300 MΩ • ≥ 99.9% linearity • ≤ 15 pF shunt capacitance • ≥ 100 GΩ I/O isolation resistance As an analog switch • Extremely low offset voltage • 60 Vpk-pk signal capability • No charge injection or latch-up • ton, toff ≤ 15 µS • UL recognized (File #E90700) • VDE recognized (File #E94766) – Ordering option ‘300’ (e.g. H11F1.300) Applications:- • As a variable resistor- Isolated variable attenuator Automatic gain control Active filter fine tuning/band switching • As an analog switch- Isolated sample and hold circuit Multiplexed, optically isolated A/D conversion Specification:- Symbol Parameter Value Unit IF Forward current 60 mA PD Power dissipation 100 mW VR Reverse Voltage 5 V Tstg Storage temperature range - 55 to + 150 °C TOPR Operating Temperature - 55 to + 150 °C TSOL Lead Solder Temperature 260 for 10 sec °C F(pk) Forward Current - Peak (10 µs pulse, 1% duty cycle) 1 A BV4-6 Breakdown Voltage (either polarity) ±30 V Related Document:- H11F1 IC Data Sheet