IRF1010 MOSFET - 60V 84A N-Channel HEXFET Power MOSFET TO-220 Package
IRF1010 MOSFET - 60V 84A N-Channel HEXFET Power MOSFET TO-220 Package
IRF1010 Advanced HEXFET® Power MOSFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extreme
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IRF1010 Advanced HEXFET® Power MOSFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. Features:- • Advanced process technology • Ultra low on-resistance • Dynamic dv/dt rating • Fast switching • Fully avalanche rated • Lead-free Detailed Specifications:- Number of Channels 1 Channel Transistor Polarity N-Channel Drain-Source Breakdown Voltage (Vds) 60V Continuous Drain Current (Id) 84A Drain-Source Resistance (Rds On) 12mOhms Gate-Source Voltage (Vgs) 20V Gate Charge (Qg) 130 nC Operating Temperature Range -55 - 150°C Power Dissipation (Pd) 200W Related Documents:- IRF1010 MOSFET Datasheet
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IRF1010 MOSFET - 60V 84A N-Channel HEXFET Power MOSFET TO-220 Package