IRF1404 MOSFET - 40V 202A N-Channel HEXFET Power MOSFET TO-220 Package

IRF1404 Seventh Generation HEXFET® Power MOSFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications including automotive. Features:- • Advanced process technology • Ultra low on-resistance • Dynamic dv/dt rating • Fast switching • Fully avalanche rated • Automotive qualified (Q101) Detailed Specifications:- Number of Channels 1 Channel Transistor Polarity N-Channel Drain-Source Breakdown Voltage (Vds) 40V Continuous Drain Current (Id) 202A Drain-Source Resistance (Rds On) 4mOhms Gate-Source Voltage (Vgs) 20V Gate Charge (Qg) 196 nC Operating Temperature Range -55 - 175°C Power Dissipation (Pd) 333W Related Documents IRF1404 MOSFET Datasheet