IRF1405 MOSFET - 55V 169A N-Channel HEXFET Power MOSFET TO-220 Package

IRF1405 stripe Planar design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this HEXFET power MOSFET are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These benefits combine to make this design an extremely efficient and reliable device for use in a wide variety of applications. Features:- • Advanced process technology • Ultra low on-resistance • Dynamic dv/dt rating • Fast switching • Repetitive avalanche allowed up to Tjmax • Lead-free Detailed Specifications:- Number of Channels 1 Channel Transistor Polarity N-Channel Drain-Source Breakdown Voltage (Vds) 55V Continuous Drain Current (Id) 169A Drain-Source Resistance (Rds On) 5.3mOhms Gate-Source Voltage (Vgs) 20V Gate Charge (Qg) 260 nC Operating Temperature Range -55 - 175°C Power Dissipation (Pd) 330W Related Documents IRF1405 MOSFET Datasheet