IRF3710 MOSFET - 100V 57A N-Channel HEXFET Power MOSFET TO-220 Package
IRF3710 MOSFET - 100V 57A N-Channel HEXFET Power MOSFET TO-220 Package
IRF3710 is Advanced HEXFET® Power MOSFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extr
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IRF3710 is Advanced HEXFET® Power MOSFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. Features:- • Advanced process technology • Ultra low on-resistance • Dynamic dv/dt rating • Fast switching • Fully avalanche rated Detailed Specifications:- Number of Channels 1 Channel Transistor Polarity N-Channel Drain-Source Breakdown Voltage (Vds) 100V Continuous Drain Current (Id) 57A Drain-Source Resistance (Rds On) 23mOhms Gate-Source Voltage (Vgs) 20V Gate Charge (Qg) 130 nC Operating Temperature Range -55 - 175°C Power Dissipation (Pd) 200W Related Documents IRF3710 MOSFET Datasheet
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IRF3710 MOSFET - 100V 57A N-Channel HEXFET Power MOSFET TO-220 Package