IRFB4110 MOSFET- 100V 180A N-Channel HEXFET Power MOSFET TO-220 Package

IRFB4110 is new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. It is very suitable for various AC/DC power conversion in switching mode operation for system miniaturization and higher efficiency. Features:- • High efficiency synchronous rectification in SMPS • Uninterruptible power supply • High speed power switching • Hard switched and high frequency circuits Detailed Specifications Number of Channels 1 Channel Transistor Polarity N-Channel Drain-Source Breakdown Voltage (Vds) 100V Continuous Drain Current (Id) 180A Drain-Source Resistance (Rds On) 4.5Ohms Gate-Source Voltage (Vgs) 20V Gate Charge (Qg) 210 nC Operating Temperature Range -55 - 175°C Power Dissipation (Pd) 370W Related Documents IRFB4110 MOSFET Datasheet