IRFBC30 MOSFET - 600V 3.6A N-Channel Power MOSFET TO-220 Package

IRFBC30 is new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. It is very suitable for various AC/DC power conversion in switching mode operation for system miniaturization and higher efficiency. Features:- • Dynamic dV/dt rating • Repetitive avalanche rated • Fast switching • Ease of paralleling • Simple Drive Requirements • Compliant to RoHS Directive 2002/95/EC Detailed Specifications:- Number of Channels 1 Channel Transistor Polarity N-Channel Drain-Source Breakdown Voltage (Vds) 600V Continuous Drain Current (Id) 3.6A Drain-Source Resistance (Rds On) 2.2Ohms Gate-Source Voltage (Vgs) 20V Gate Charge (Qg) 31 nC Operating Temperature Range -55 - 150°C Power Dissipation (Pd) 74W Related Documents IRFBC30 MOSFET Datasheet