IRFBG30 MOSFET - 1000V 3.1A N-Channel Power MOSFET TO-220 Package

IRFBG30 is new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. It is very suitable for various AC/DC power conversion in switching mode operation for system miniaturization and higher efficiency. Features:- • Dynamic dV/dt rating • Repetitive avalanche rated • Fast switching • Ease of paralleling • Simple Drive Requirements • Compliant to RoHS Directive 2002/95/EC Detailed Specifications:- Number of Channels 1 Channel Transistor Polarity N-Channel Drain-Source Breakdown Voltage (Vds) 1000V Continuous Drain Current (Id) 3.1A Drain-Source Resistance (Rds On) 5Ohms Gate-Source Voltage (Vgs) 20V Gate Charge (Qg) 80 nC Operating Temperature Range -55 - 150°C Power Dissipation (Pd) 125W Related Documents:- IRFBG30 MOSFET Datasheet