IRFP250N MOSFET - 200V 30A N-Channel Power MOSFET TO-247 Package

IRFP250N is new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. It is very suitable for various AC/DC power conversion in switching mode operation for system miniaturization and higher efficiency. Features:- • Advanced process technology • Dynamic dv/dt rating • Fast switching • Fully avalanche rated • Ease of paralleling • Simple drive requirements Detailed Specifications:- Number of Channels 1 Channel Transistor Polarity N-Channel Drain-Source Breakdown Voltage (Vds) 200V Continuous Drain Current (Id) 30A Drain-Source Resistance (Rds On) 0.075Ohms Gate-Source Voltage (Vgs) 20V Gate Charge (Qg) 123 nC Operating Temperature Range -55 - 175°C Power Dissipation (Pd) 214W Related Documents:- IRFP250N MOSFET Datasheet