IRFP2907 MOSFET - 75V 209A N-Channel Power MOSFET TO-247 Package

IRFP2907 are Specifically designed for Automotive applications, this Stripe Planar design of HEXFET® Power MOSFETs utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this HEXFET power MOSFET are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These benefits combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications. Features:- • Advanced process technology • Ultra low on-resistance • Dynamic dv/dt rating • Fast switching • Repetitive avalanche allowed up to Tjmax Detailed Specifications Number of Channels 1 Channel Transistor Polarity N-Channel Drain-Source Breakdown Voltage (Vds) 75V Continuous Drain Current (Id) 209A Drain-Source Resistance (Rds On) 4.5mOhms Gate-Source Voltage (Vgs) 20V Gate Charge (Qg) 620 nC Operating Temperature Range -55 - 175°C Power Dissipation (Pd) 470W Related Documents IRFP2907 MOSFET Datasheet