IRFP450 MOSFET - 500V 14A N-Channel Power MOSFET TO-247 Package

IRFP450 N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. Features:- • Single Pulse Avalanche Energy Rated • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics • High Input Impedance Detailed Specifications:- Number of Channels 1 Channel Transistor Polarity N-Channel Drain-Source Breakdown Voltage (Vds) 500V Continuous Drain Current (Id) 14A Drain-Source Resistance (Rds On) 370mOhms Gate-Source Voltage (Vgs) 30V Gate Charge (Qg) 77 nC Operating Temperature Range -55 - 150°C Power Dissipation (Pd) 200W Related Documents IRFP450 MOSFET Datasheet