IRFZ14N MOSFET - 60V 10A N-Channel Power MOSFET TO-220 Package

Third generation Power MOSFETs from the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220AB contribute to its wide acceptance throughout the industry. Features :- Dynamic dV/dt Rating 175 °C Operating Temperature Fast Switching Ease of Paralleling Simple Drive Requirements Compliant to RoHS Directive 2002/95/EC Specifications :- Drain-Source Breakdown Voltage Minimum : 60V Temperature Coefficient : 0.063V/°C Gate-Source Threshold Voltage Minimum : 2.0V Gate-Source Threshold Voltage Maximum : 4.0V Gate-Source Leakage Maximum : +100nA Zero Gate Voltage Drain Current Maximum : 250μA Drain-Source On-State Resistance Maximum : 0.20Ω Forward Transconductance minimum : 2.4S Package Includes :- 1 X IRFZ14N MOSFET - 60V 10A N-Channel Power MOSFET TO-220 Package