IRFZ48N MOSFET - 55V 64A N-Channel Power MOSFET TO-220 Package
IRFZ48N MOSFET - 55V 64A N-Channel Power MOSFET TO-220 Package
IRFZ48N utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for u
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IRFZ48N utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. Features:- • Advanced process technology • Ultra Low On-Resistance • Fully Avalanche Rated • 175 °C operating temperature • Fast switching Detailed Specifications:- Number of Channels 1 Channel Transistor Polarity N-Channel Drain-Source Breakdown Voltage (Vds) 55V Continuous Drain Current (Id) 64A Drain-Source Resistance (Rds On) 0.014Ohms Gate-Source Voltage (Vgs) 20V Gate Charge (Qg) 81 nC Operating Temperature Range -55 - 175°C Power Dissipation (Pd) 130W Related Documents IRFZ48N MOSFET Datasheet
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IRFZ48N MOSFET - 55V 64A N-Channel Power MOSFET TO-220 Package