IRGB430U MOSFET - 500V 15A N- Channel Power MOSFET TO-220 Package

Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET. They provide substantial benefits to a host of high-voltage, high-current applications Features :- Switching-loss rating includes all "tail" losses Optimized for high operating frequency (over 5kHz) See Fig. 1 for Current vs. Frequency curve Specifications :- Collector-to-Emitter Breakdown Voltage min : 500V Emitter-to-Collector Breakdown Voltage min : 20V Temperature Coeff. of Breakdown Voltage typ : 0.46V/°C Gate Threshold Voltage min : 3.0V Gate Threshold Voltage max : 5.5V Temperature Coeff. of Threshold Voltage typ : -11mV/°C Forward Transconductance min : 2.3S Forward Transconductance typ : 8.1S Gate-to-Emitter Leakage Current max : +100nA Package Includes :- 1 X IRGB430U MOSFET - 500V 15A N- Channel Power MOSFET TO-220 Package