LF356 JFET Input Op-Amp IC DIP-8 Package

The LF356 device are the first monolithic JFET input operational amplifiers to incorporate well matched, high-voltage JFETs on the same chip with standard bipolar transistors (BI-FET™ Technology). These amplifiers feature low input bias and offset currents/low offset voltage and offset voltage drift, coupled with offset adjust, which does not degrade drift or common-mode rejection. The devices are also designed for high slew rate, wide bandwidth, extremely fast settling time, low voltage and current noise and a low 1/f noise corner. Features:- 1. Advantages – Replace Expensive Hybrid and Module FET Op Amps – Rugged JFETs Allow Blow-Out Free Handling Compared With MOSFET Input Devices – Excellent for Low Noise Applications Using Either High or Low Source Impedance —Very Low 1/f Corner – Offset Adjust Does Not Degrade Drift or Common-Mode Rejection as in Most Monolithic Amplifiers – New Output Stage Allows Use of Large Capacitive Loads (5,000 pF) Without Stability Problems – Internal Compensation and Large Differential Input Voltage Capability 2. Common Features – Low Input Bias Current: 30 pA – Low Input Offset Current: 3 pA – High Input Impedance: 1012 Ω – Low Input Noise Current: 0.01 pA/√Hz – High Common-Mode Rejection Ratio: 100 dB – Large DC Voltage Gain: 106 dB 3. Uncommon Features – Extremely Fast Settling Time to 0.01%: 1.5 μs – Fast Slew Rate: 12 V/µs – Wide Gain Bandwidth: 5 MHz – Low Input Noise Voltage: 12 nV/√Hz Specification:- Parameter Min Max Unit Supply Voltage ±18 V Differential input voltage ±30 V Output short-circuit (to ground) Continuous Operating temperature -40 125 °C Soldering information (lead temp.) 260 °C Storage temperature -65 150 °C Input voltage ±16 V Related Document:- LF356 IC Datasheet