MC33153P Single IGBT Gate Driver IC DIP-8 Package

The MC33153 is specifically designed as an IGBT driver for high power applications that include ac induction motor control, brushless dc motor control and uninterruptable power supplies. Although designed for driving discrete and module IGBTs, this device offers a cost effective solution for driving power MOSFETs and Bipolar Transistors. Device protection features include the choice of desaturation or overcurrent sensing and undervoltage detection. These devices are available in dual−in−line and surface mount packages. Features:- High Current Output Stage: 1.0 A Source/2.0 A Sink Protection Circuits for Both Conventional and Sense IGBTs Programmable Fault Blanking Time Protection against Overcurrent and Short Circuit Undervoltage Lockout Optimized for IGBT’s Negative Gate Drive Capability Cost Effectively Drives Power MOSFETs and Bipolar Transistors This is a Pb−Free and Halide−Free Device Specification:- Rating Symbol Value Unit Power Supply Voltage VCC − VEE 20 V Logic Input Vin VEE −0.3 to VCC V Current Sense Input VS −0.3 to VCC V Blanking/Desaturation Input VBD −0.3 to VCC V Gate Drive Output-Source Current IO 1 A Fault Output-Source Current IFO 25 mA Maximum Power Dissipation @ TA = 50°C PD 0.56 W Operating Junction Temperature Tj 150 °C Operating Ambient Temperature Ta −40 to +105 °C Storage Temperature Range Tstg −65 to +150 °C Human Body Model (HBM), Machine Model (MM), Charged Device Model (CDM) ESD 2500, 250, 1500 V Related Document:- MC33153P IC Datasheet