MJ15003 NPN Bipolar Power Transistor 140V 20A TO-3 Metal Package
MJ15003 NPN Bipolar Power Transistor 140V 20A TO-3 Metal Package
MJ15003 is a three layer NPN device within the working range, the collector current IC is a function of the base current IB, a change in the base current giving a corresponding amplified change in the collector current for a given collector emitter voltage VCE. Features:- • High safe operating area
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MJ15003 is a three layer NPN device within the working range, the collector current IC is a function of the base current IB, a change in the base current giving a corresponding amplified change in the collector current for a given collector emitter voltage VCE. Features:- • High safe operating area • For low distortion complementary designs • High DC current gain • Simple drive requirements • Easy to carry and handle Detailed Specifications:- Transistor Polarity NPN Collector−Emitter Voltage (VCEO) 140VDC Collector−Base Voltage (VCBO) 140VDC Emitter−Base Voltage (VEBO) 5VDC Continuous Collector Current (Ic) 20ADC Continuous Base Current (Ib) 5ADC Continuous Emitter Current (Ie) 25ADC Power Dissipation (Pd) 250W Operating Temperature Range -65 - 200°C DC Current Gain (hFE) 150 Related Documents MJ15003 Transistor Datasheet
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MJ15003 NPN Bipolar Power Transistor 140V 20A TO-3 Metal Package