MJE200 NPN Power Transistor 25V 5A TO-126 Package
MJE200 NPN Power Transistor 25V 5A TO-126 Package
MJE200 is a three layer NPN device within the working range, the collector current IC is a function of the base current IB, a change in the base current giving a corresponding amplified change in the collector current for a given collector emitter voltage VCE. Features:- • High DC current gain • Low
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MJE200 is a three layer NPN device within the working range, the collector current IC is a function of the base current IB, a change in the base current giving a corresponding amplified change in the collector current for a given collector emitter voltage VCE. Features:- • High DC current gain • Low collector−emitter saturation voltage • High current−gain − bandwidth product • Annular construction for low leakage • These devices are Pb−Free and are RoHS compliant Detailed Specifications:- Transistor Polarity NPN Collector−Emitter Voltage (VCEO) 40VDC Collector−Base Voltage (VCBO) 25VDC Emitter−Base Voltage (VEBO) 8VDC Continuous Collector Current (Ic) 5ADC Continuous Base Current (Ib) 1ADC Power Dissipation (Pd) 15W Operating Temperature Range -65 - 150°C DC Current Gain (hFE) 45-180 Related Documents:- MJE200 Transistor Datasheet
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MJE200 NPN Power Transistor 25V 5A TO-126 Package