MJE3055T NPN Power Transistor 60V 10A TO-220 Package

MJE3055T is a three layer NPN or PNP device within the working range, the collector current IC is a function of the base current IB, a change in the base current giving a corresponding amplified change in the collector current for a given collector emitter voltage VCE. Features:- • High DC current gain • Low collector−emitter saturation voltage • High current−gain − bandwidth product • Annular construction for low leakage • These devices are Pb−Free and are RoHS compliant Detailed Specifications:- Transistor Polarity NPN Collector−Emitter Voltage (VCEO) 60VDC Collector−Base Voltage (VCBO) 70VDC Emitter−Base Voltage (VEBO) 5VDC Continuous Collector Current (Ic) 10ADC Continuous Base Current (Ib) 6ADC Power Dissipation (Pd) 75W Operating Temperature Range -55 - 150°C DC Current Gain (hFE) 20-70 Related Documents:- MJE3055T Transistor Datasheet