MJE350 PNP Bipolar Power Transistor 300V 500mA TO-126 Package
MJE350 PNP Bipolar Power Transistor 300V 500mA TO-126 Package
MJE350 is a three layer NPN or PNP device within the working range, the collector current IC is a function of the base current IB, a change in the base current giving a corresponding amplified change in the collector current for a given collector emitter voltage VCE. Features:- • High DC current gai
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MJE350 is a three layer NPN or PNP device within the working range, the collector current IC is a function of the base current IB, a change in the base current giving a corresponding amplified change in the collector current for a given collector emitter voltage VCE. Features:- • High DC current gain • Low collector−emitter saturation voltage • High current−gain − bandwidth product • Annular construction for low leakage • Complementary NPN - PNP devices Detailed Specifications:- Transistor Polarity PNP Collector−Emitter Voltage (VCEO) 300V Collector−Base Voltage (VCBO) 300V Emitter−Base Voltage (VEBO) 3V Continuous Collector Current (Ic) 0.5A Power Dissipation (Pd) 20.8W Operating Temperature Range -65 - 150°C DC Current Gain (hFE) 30-240 Related Documents:- MJE350 Transistor Datasheet
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MJE350 PNP Bipolar Power Transistor 300V 500mA TO-126 Package