MMBT5551 - (SMD SOT-23 Package) - NPN High Voltage Transistor - 5 Pieces Pack
MMBT5551 - (SMD SOT-23 Package) - NPN High Voltage Transistor - 5 Pieces Pack
MMBT5551 NPN High Voltage transistor comes in Surface-Mounted Device SMD SOT-23 plastic package. Specifications:- Product Category: Bipolar Transistors - BJT Mounting Style: SMD/SMT Package/Case: SOT-23-3 Transistor Polarity: NPN Configuration: Single Collector- Emitter Voltage VCEO Max: 160 V Colle
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- Product Category: Bipolar Transistors - BJT
- Mounting Style: SMD/SMT
- Package/Case: SOT-23-3
- Transistor Polarity: NPN
- Configuration: Single
- Collector- Emitter Voltage VCEO Max: 160 V
- Collector- Base Voltage VCBO: 180 V
- Emitter- Base Voltage VEBO: 6 V
- Maximum DC Collector Current: 0.6 A
- Gain Bandwidth Product fT: 300 MHz
- Maximum Operating Temperature: + 150 C
- Series: MMBT5551
- Continuous Collector Current: 0.6 A
- DC Collector/Base Gain hFE Min: 80 at 1 mA at 5 V, 80 at 10 mA at 5 V, 30 at 50 mA at 5 V
- Minimum Operating Temperature: - 55 C
- Pd - Power Dissipation: 300 mW
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MMBT5551 NPN High Voltage transistor comes in Surface-Mounted Device SMD SOT-23 plastic package. Specifications:- Product Category: Bipolar Transistors - BJT Mounting Style: SMD/SMT Package/Case: SOT-23-3 Transistor Polarity: NPN Configuration: Single Collector- Emitter Voltage VCEO Max: 160 V Collector- Base Voltage VCBO: 180 V Emitter- Base Voltage VEBO: 6 V Maximum DC Collector Current: 0.6 A Gain Bandwidth Product fT: 300 MHz Maximum Operating Temperature: + 150 C Series: MMBT5551 Continuous Collector Current: 0.6 A DC Collector/Base Gain hFE Min: 80 at 1 mA at 5 V, 80 at 10 mA at 5 V, 30 at 50 mA at 5 V Minimum Operating Temperature: - 55 C Pd - Power Dissipation: 300 mW
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MMBT5551 - (SMD SOT-23 Package) - NPN High Voltage Transistor - 5 Pieces Pack